Posted Jun 29, 2017 09:35 (GMT +7)
Toshiba Memory Corporation Develops World's First QLC 3D Flash Memory
Achieves World’s Largest Capacity of 1.5TB in a Single Package with BiCS FLASH™ chip
TOKYO--(BUSINESS WIRE)--Jun. 28, 2017
Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first BiCS FLASH™ three-dimensional (3D) flash memory with a stacked cell structure. The newest BiCS FLASH™ device is the first to deliver 4-bit-per-cell (quadruple-level cell, QLC) technology, advancing capacity beyond that of triple-level cell (TLC) devices and pushing the boundaries of flash memory technology.
This Smart News Release features multimedia. View the full release here: http://www.businesswire.com/news/home/20170627006601/en/
QLC 3D Flash Memory (Photo: Business Wire)
Multi-bit cell flash memories store data by managing the number of electrons in each individual memory cell. Achieving QLC technology posed a series of technical challenges, as increasing the number of bit-per-cell by one within same electron count requires twice the accuracy of TLC technology. Toshiba Memory has drawn on its advanced circuit design capabilities and industry-leading 64-layer 3D flash memory process technology to create the QLC 3D flash memory.
The prototype features the world’s largest die capacity (768 gigabits/96 gigabytes) with 64-layer 3D flash memory process. Shipment of prototypes to SSD and SSD controller vendors for evaluation and development purposes started in early June.
The QLC 3D flash memory also enables a 1.5-terabyte (TB) device with a 16-die stacked architecture in a single package - the industry’s largest capacity. Samples of this groundbreaking device will be showcased at the 2017 Flash Memory Summit in Santa Clara, California, United States, from August 7-10.
Toshiba Memory already mass produces 64-layer 256-gigabit (32-gigabytes) devices, and as it expands mass production it will continue to demonstrate industry leadership by advancing technology development. Focused on meeting growing demand for high density, smaller chip size flash memory solutions, the new QLC device targets such applications as enterprise SSD, consumer SSD and memory cards.
1. Source: Toshiba Memory Corporation, as of June 28, 2017.
2. A structure stacking Flash memory cells vertically on a silicon substrate to realize significant density improvements over planar NAND Flash memory, where cells are formed on the silicon substrate.
3. Source: Toshiba Memory Corporation, as of June 28, 2017.
4. Source: Toshiba Memory Corporation, as of June 28, 2017.
• Company names, product names, and service names mentioned herein may be trademarks of their respective companies.
View source version on businesswire.com: http://www.businesswire.com/news/home/20170627006601/en/
Toshiba Memory Corporation
Kota Yamaji, +81-3-3457-3473
Business Planning Division
Distribute your news release with us
Our media lists include news desks at all leading Thai and English-language dailies.
Radio & TV
We deliver your news to leading Thai radio stations and TV channels.
All releases are submitted to Internet news sites, including several with guaranteed pickup.
Our Self-Serve News Release Couldn't Be Simpler
Our streamlined online process makes it simple and fast to submit your news to the Thai media. Once registered, just enter or copy your text into our submission form and you'll see an instant preview with our fee based on the word count, translation, and any attached image. To confirm submission, hit Enter to be taken to our payment processor. Once payment is approved, your release passes automatically to our news desk for translation and dissemination by our skilled and experienced team. You'll be kept informed at each step of the process.