Kioxia Pushes Performance Boundaries With New Ver. 3.1 UFS Embedded Flash Memory Devices
Posted Aug 12, 2021 14:04 (GMT +7)
Built on Fifth-Generation BiCS FLASH™ 3D Flash Memory; Brings Thinner Profile, Faster Read/Write Speeds to Demanding Applications
TOKYO--(BUSINESS WIRE)--Aug. 11, 2021
Kioxia Corporation, a world leader in memory solutions, today announced sampling of its newest generation of 256 and 512 gigabyte (GB) Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices. Housed in 0.8 and 1.0mm-high packages, the new products improve performance by approximately 30% for random read and approximately 40% for random write – making them thinner and faster than their predecessors. Kioxia’s new UFS devices utilize the company’s high-performance fifth-generation BiCS FLASH™ 3D flash memory and are targeted to a variety of mobile applications including leading-edge smartphones.
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Kioxia Corporation: UFS Ver. 3.1 embedded flash memory devices (Photo: Business Wire)
The broad set of power and space conscious applications that utilize embedded flash memory continue to need higher performance and density, and UFS has increasingly been the solution of choice. From a total GB perspective, UFS now accounts for the majority of the demand relative to e-MMC. According to Forward Insights, when combining overall UFS and e-MMC GB demand worldwide, almost 70% of the demand this year is for UFS, and this will continue to grow.
The new UFS 256GB and 512GB devices include the following advances:
Performance increase of approximately 30% for random read and approximately 40% for random write.
Host Performance Booster (HPB) Ver. 2.0: Improves random read performance by utilizing the host side memory to store logical to physical translation tables. While HPB Ver. 1.0 only enables 4KB chunk size access, HPB Ver. 2.0 enables wider access - which can further boost random read performance.
Thinner 256GB package at just 0.8mm height.
 Compared to Kioxia’s prior generation of 256/512GB UFS.
 In the case of 256GB density compared to Kioxia’s prior generation 256GB UFS.
 Forward Insights “NAND Quarterly Insights” 2Q (2021)
Read and write speed may vary depending on the host device, read and write conditions, and file size.
In every mention of a Kioxia product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1KB = 2^10 bytes = 1,024 bytes. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. 1Tb = 2^40 bits = 1,099,511,627,776 bits.
All company names, product names and service names may be trademarks of their respective companies
Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with “memory” by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, SSDs, automotive and data centers.
Memory Sales & Marketing Division
*Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.
View source version on businesswire.com: https://www.businesswire.com/news/home/20210810006065/en/
Sales Strategic Planning Division
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